Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/153913
Title: WAFER BONDING FOR MOCVD ALGaAS LEDS WITH TRANSPARENT SUBSTRATE GaP
Authors: ZHAO XIN YUE
Keywords: Wafer bonding
GaAs
AlGaAs
Plasma
Issue Date: 2006
Citation: ZHAO XIN YUE (2006). WAFER BONDING FOR MOCVD ALGaAS LEDS WITH TRANSPARENT SUBSTRATE GaP. ScholarBank@NUS Repository.
Abstract: GaAs substrate absorbs light produced by epitaxial grown AlGaAs layer, since GaAs has smaller band gap than AlGaAs. To achieve Light Emitting Diode (LED) with back-emitting characteristics, the objective of this project is to bond GaP, which has a larger bandgap than AlGaAs, onto AlGaAs surface. Surface treatment procedure and bonding recipe were developed and strong bonding, which can withstand lapping force and etching chemicals, was achieved. Bonding quality was tested using various characterization tools and methods, including optical microscope, scanning acoustic microscopy (SAM), scanning electronic microscopy (SEM) and Instron tensile strength testing machine. Plasma assisted wafer bonding and optimum plasma condition are also explored.
URI: https://scholarbank.nus.edu.sg/handle/10635/153913
Appears in Collections:Master's Theses (Restricted)

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