Please use this identifier to cite or link to this item: https://doi.org/10.1038/s41467-018-04988-x
Title: Evidence for line width and carrier screening effects on excitonic valley relaxation in 2D semiconductors
Authors: Miyauchi Y.
Konabe S.
Wang F.
Zhang W.
Hwang A.
Hasegawa Y.
Zhou L.
Mouri S.
Toh M. 
Eda G.
Matsuda K. 
Issue Date: 2018
Publisher: Nature Publishing Group
Citation: Miyauchi Y., Konabe S., Wang F., Zhang W., Hwang A., Hasegawa Y., Zhou L., Mouri S., Toh M., Eda G., Matsuda K. (2018). Evidence for line width and carrier screening effects on excitonic valley relaxation in 2D semiconductors. Nature Communications 9 (1) : 2598. ScholarBank@NUS Repository. https://doi.org/10.1038/s41467-018-04988-x
Abstract: Monolayers of transition metal dichalcogenides (TMDC) have recently emerged as excellent platforms for exploiting new physics and applications relying on electronic valley degrees of freedom in two-dimensional (2D) systems. Here, we demonstrate that Coulomb screening by 2D carriers plays a critical role in excitonic valley pseudospin relaxation processes in naturally carrier-doped WSe2 monolayers (1L-WSe2). The exciton valley relaxation times were examined using polarization- and time-resolved photoluminescence spectroscopy at temperatures ranging from 10 to 160 K. We show that the temperature-dependent exciton valley relaxation times in 1L-WSe2 under various exciton and carrier densities can be understood using a unified framework of intervalley exciton scattering via momentum-dependent long-range electron-hole exchange interactions screened by 2D carriers that depend on the carrier density and the exciton linewidth. Moreover, the developed framework was successfully applied to engineer the valley polarization of excitons in 1L-WSe2. These findings may facilitate the development of TMDC-based opto-valleytronic devices. © 2018 The Author(s).
Source Title: Nature Communications
URI: http://scholarbank.nus.edu.sg/handle/10635/152525
ISSN: 20411723
DOI: 10.1038/s41467-018-04988-x
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