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Please use this identifier to cite or link to this item: https://doi.org/10.1155/2014/752967
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dc.titleExcellent silicon surface passivation achieved by industrial inductively coupled plasma deposited hydrogenated intrinsic amorphous silicon suboxide
dc.contributor.authorGe J.
dc.contributor.authorTang M.
dc.contributor.authorWong J.
dc.contributor.authorZhang Z.
dc.contributor.authorDippell T.
dc.contributor.authorDoerr M.
dc.contributor.authorHohn O.
dc.contributor.authorHuber M.
dc.contributor.authorWohlfart P.
dc.contributor.authorAberle A.G.
dc.contributor.authorMueller T.
dc.date.accessioned2018-08-20T02:35:45Z
dc.date.available2018-08-20T02:35:45Z
dc.date.issued2014
dc.identifier.citationGe J., Tang M., Wong J., Zhang Z., Dippell T., Doerr M., Hohn O., Huber M., Wohlfart P., Aberle A.G., Mueller T. (2014). Excellent silicon surface passivation achieved by industrial inductively coupled plasma deposited hydrogenated intrinsic amorphous silicon suboxide. International Journal of Photoenergy 2014 : 752967. ScholarBank@NUS Repository. https://doi.org/10.1155/2014/752967
dc.identifier.issn1110662X
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/145992
dc.publisherHindawi Publishing Corporation
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL AND COMPUTER ENGINEERING
dc.description.doi10.1155/2014/752967
dc.description.sourcetitleInternational Journal of Photoenergy
dc.description.volume2014
dc.description.page752967
dc.published.statepublished
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