Editorial: Si- and Ge-based electronic devices

Please use this identifier to cite or link to this item: https://doi.org/10.1155/2015/864972

DC Field	Value
dc.title	Editorial: Si- and Ge-based electronic devices
dc.contributor.author	Zhao Y.
dc.contributor.author	Zhang R.
dc.contributor.author	Lu J.
dc.contributor.author	Zhang W.
dc.date.accessioned	2018-08-17T08:31:57Z
dc.date.available	2018-08-17T08:31:57Z
dc.date.issued	2015
dc.identifier.citation	Zhao Y., Zhang R., Lu J., Zhang W. (2015). Editorial: Si- and Ge-based electronic devices. Advances in Condensed Matter Physics 2015 : 864972. ScholarBank@NUS Repository. https://doi.org/10.1155/2015/864972
dc.identifier.issn	16878108
dc.identifier.uri	http://scholarbank.nus.edu.sg/handle/10635/145925
dc.publisher	Hindawi Publishing Corporation
dc.source	Scopus
dc.type	Editorial
dc.contributor.department	ELECTRICAL AND COMPUTER ENGINEERING
dc.description.doi	10.1155/2015/864972
dc.description.sourcetitle	Advances in Condensed Matter Physics
dc.description.volume	2015
dc.description.page	864972
dc.published.state	published
Appears in Collections:	Elements Staff Publications

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