Please use this identifier to cite or link to this item: https://doi.org/10.1007/s00339-009-5536-0
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dc.titleLow threshold field electron emission from solvothermally synthesized WO2.72 nanowires
dc.contributor.authorLate, D.J.
dc.contributor.authorKashid, R.V.
dc.contributor.authorSekhar Rout, C.
dc.contributor.authorMore, M.A.
dc.contributor.authorJoag, D.S.
dc.date.accessioned2016-12-13T09:15:11Z
dc.date.available2016-12-13T09:15:11Z
dc.date.issued2010-03
dc.identifier.citationLate, D.J., Kashid, R.V., Sekhar Rout, C., More, M.A., Joag, D.S. (2010-03). Low threshold field electron emission from solvothermally synthesized WO2.72 nanowires. Applied Physics A: Materials Science and Processing 98 (4) : 751-756. ScholarBank@NUS Repository. https://doi.org/10.1007/s00339-009-5536-0
dc.identifier.issn09478396
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/133097
dc.description.abstractField emission studies of WO2.72 nanowires synthesized by a solvothermal method have been performed in the planar diode configuration under ultra high vacuum conditions. Fowler-Nordheim plots obtained from the current-voltage characteristics follow the quantum mechanical tunneling process and a current density of ∼8.3×106 μA/cm2 can be drawn at an applied electric field of 2 V/μm. The field enhancement factor is 33025, while the turn-on field is only 1.4 V/μm. The emission current-time plot recorded at the pre-set value of emission current of 1 μA over a period of more than 3 h exhibits an initial increase and a subsequent stabilization of the emission current. The results reveal that the WO 2.72 nanowire emitters synthesized by the solvothermal method are promising cathode materials for practical applications. © 2009 Springer-Verlag.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1007/s00339-009-5536-0
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentSINGAPORE-MIT ALLIANCE
dc.description.doi10.1007/s00339-009-5536-0
dc.description.sourcetitleApplied Physics A: Materials Science and Processing
dc.description.volume98
dc.description.issue4
dc.description.page751-756
dc.description.codenAPAMF
dc.identifier.isiut000274330700007
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