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https://doi.org/10.1007/s00339-009-5536-0
DC Field | Value | |
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dc.title | Low threshold field electron emission from solvothermally synthesized WO2.72 nanowires | |
dc.contributor.author | Late, D.J. | |
dc.contributor.author | Kashid, R.V. | |
dc.contributor.author | Sekhar Rout, C. | |
dc.contributor.author | More, M.A. | |
dc.contributor.author | Joag, D.S. | |
dc.date.accessioned | 2016-12-13T09:15:11Z | |
dc.date.available | 2016-12-13T09:15:11Z | |
dc.date.issued | 2010-03 | |
dc.identifier.citation | Late, D.J., Kashid, R.V., Sekhar Rout, C., More, M.A., Joag, D.S. (2010-03). Low threshold field electron emission from solvothermally synthesized WO2.72 nanowires. Applied Physics A: Materials Science and Processing 98 (4) : 751-756. ScholarBank@NUS Repository. https://doi.org/10.1007/s00339-009-5536-0 | |
dc.identifier.issn | 09478396 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/133097 | |
dc.description.abstract | Field emission studies of WO2.72 nanowires synthesized by a solvothermal method have been performed in the planar diode configuration under ultra high vacuum conditions. Fowler-Nordheim plots obtained from the current-voltage characteristics follow the quantum mechanical tunneling process and a current density of ∼8.3×106 μA/cm2 can be drawn at an applied electric field of 2 V/μm. The field enhancement factor is 33025, while the turn-on field is only 1.4 V/μm. The emission current-time plot recorded at the pre-set value of emission current of 1 μA over a period of more than 3 h exhibits an initial increase and a subsequent stabilization of the emission current. The results reveal that the WO 2.72 nanowire emitters synthesized by the solvothermal method are promising cathode materials for practical applications. © 2009 Springer-Verlag. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1007/s00339-009-5536-0 | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | SINGAPORE-MIT ALLIANCE | |
dc.description.doi | 10.1007/s00339-009-5536-0 | |
dc.description.sourcetitle | Applied Physics A: Materials Science and Processing | |
dc.description.volume | 98 | |
dc.description.issue | 4 | |
dc.description.page | 751-756 | |
dc.description.coden | APAMF | |
dc.identifier.isiut | 000274330700007 | |
Appears in Collections: | Staff Publications |
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