Please use this identifier to cite or link to this item: https://doi.org/10.1109/JPHOTOV.2013.2270357
Title: Single-component damage-etch process for improved texturization of monocrystalline silicon wafer solar cells
Authors: Basu, P.K. 
Sarangi, D. 
Boreland, M.B. 
Keywords: Alkaline texturing
chemical oxidation
industrial monocrystalline silicon solar cells
low cost
NaOCl saw damage etch
Issue Date: 2013
Citation: Basu, P.K., Sarangi, D., Boreland, M.B. (2013). Single-component damage-etch process for improved texturization of monocrystalline silicon wafer solar cells. IEEE Journal of Photovoltaics 3 (4) : 1222-1228. ScholarBank@NUS Repository. https://doi.org/10.1109/JPHOTOV.2013.2270357
Abstract: A new saw damage-etch process based on a hot sodium hypochlorite (NaOCl) solution is reported here. This process performs simultaneous damage removal and oxide masking of raw c-Si wafers in a single step. NaOCl is a strong oxidizing agent, and during the NaOCl damage-etch process, the oxide grown remains present even after the completion of the process. This oxide layer acts as protective mask during alkaline texture to form uniform and small (∼2-4 μm height) pyramids on the 1 0 0 Si wafer surface. Unlike chemical vapor deposited silicon nitride or silicon dioxide protective masking processes reported by other researchers, this new damage-etch process is cost effective. It is also a single-component damage-etch process using only NaOCl solution. Thus, it involves easy bath preparation and performs in situ chlorine cleaning. Using the new damage-etch process, optimized texturing of the wafers is ascertained by electron microscopy and reflectivity studies of the textured surfaces. This new process is applied in the industrial R&D pilot line of the Solar Energy Research Institute of Singapore (SERIS) to fabricate screen-printed 156-mm pseudosquare p-type solar cells with tube-diffused emitters to yield efficiencies of over 18%. © 2011-2012 IEEE.
Source Title: IEEE Journal of Photovoltaics
URI: http://scholarbank.nus.edu.sg/handle/10635/128742
ISSN: 21563381
DOI: 10.1109/JPHOTOV.2013.2270357
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