The impact of surface damage region and edge recombination on the effective lifetime of silicon wafers at low illumination conditions

Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4913451

DC Field	Value
dc.title	The impact of surface damage region and edge recombination on the effective lifetime of silicon wafers at low illumination conditions
dc.contributor.author	Hameiri Z.
dc.contributor.author	Ma, F.-J.
dc.date.accessioned	2016-09-20T05:46:18Z
dc.date.available	2016-09-20T05:46:18Z
dc.date.issued	2015
dc.identifier.citation	Hameiri Z., Ma, F.-J. (2015). The impact of surface damage region and edge recombination on the effective lifetime of silicon wafers at low illumination conditions. Journal of Applied Physics 117 (8). ScholarBank@NUS Repository. https://doi.org/10.1063/1.4913451
dc.identifier.issn	00218979
dc.identifier.uri	http://scholarbank.nus.edu.sg/handle/10635/128145
dc.description.uri	http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.4913451
dc.publisher	American Institute of Physics Inc.
dc.type	Article
dc.contributor.department	ELECTRICAL & COMPUTER ENGINEERING
dc.description.doi	10.1063/1.4913451
dc.description.sourcetitle	Journal of Applied Physics
dc.description.volume	117
dc.description.issue	8
dc.identifier.isiut	000351132500074
dc.published.state	Published
Appears in Collections:	Staff Publications

There are no files associated with this item.

Check