Please use this identifier to cite or link to this item:
https://doi.org/10.1016/j.jallcom.2015.02.139
DC Field | Value | |
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dc.title | Band alignment of HfAlO/GaN (0 0 0 1) determined by X-ray photoelectron spectroscopy: Effect of in situ SiH4 passivation | |
dc.contributor.author | Liu, X. | |
dc.contributor.author | Liu, Z. | |
dc.contributor.author | Pannirselvam, S. | |
dc.contributor.author | Pan, J. | |
dc.contributor.author | Liu, W. | |
dc.contributor.author | Jia, F. | |
dc.contributor.author | Lu, Y. | |
dc.contributor.author | Liu, C. | |
dc.contributor.author | Yu, W. | |
dc.contributor.author | He, J. | |
dc.contributor.author | Tan, L.S. | |
dc.date.accessioned | 2016-09-20T05:46:11Z | |
dc.date.available | 2016-09-20T05:46:11Z | |
dc.date.issued | 2015 | |
dc.identifier.citation | Liu, X., Liu, Z., Pannirselvam, S., Pan, J., Liu, W., Jia, F., Lu, Y., Liu, C., Yu, W., He, J., Tan, L.S. (2015). Band alignment of HfAlO/GaN (0 0 0 1) determined by X-ray photoelectron spectroscopy: Effect of in situ SiH4 passivation. Journal of Alloys and Compounds 636 : 191-195. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jallcom.2015.02.139 | |
dc.identifier.issn | 09258388 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/128133 | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.jallcom.2015.02.139 | |
dc.publisher | Elsevier | |
dc.type | Article | |
dc.contributor.department | DIVISION OF BIOENGINEERING | |
dc.description.doi | 10.1016/j.jallcom.2015.02.139 | |
dc.description.sourcetitle | Journal of Alloys and Compounds | |
dc.description.volume | 636 | |
dc.description.page | 191-195 | |
dc.identifier.isiut | 000351836600032 | |
dc.published.state | Published | |
Appears in Collections: | Staff Publications |
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