1. ScholarBank@NUS
  2. 1. Staff
  3. Staff Publications
Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.jallcom.2015.02.139
DC FieldValue
dc.titleBand alignment of HfAlO/GaN (0 0 0 1) determined by X-ray photoelectron spectroscopy: Effect of in situ SiH4 passivation
dc.contributor.authorLiu, X.
dc.contributor.authorLiu, Z.
dc.contributor.authorPannirselvam, S.
dc.contributor.authorPan, J.
dc.contributor.authorLiu, W.
dc.contributor.authorJia, F.
dc.contributor.authorLu, Y.
dc.contributor.authorLiu, C.
dc.contributor.authorYu, W.
dc.contributor.authorHe, J.
dc.contributor.authorTan, L.S.
dc.date.accessioned2016-09-20T05:46:11Z
dc.date.available2016-09-20T05:46:11Z
dc.date.issued2015
dc.identifier.citationLiu, X., Liu, Z., Pannirselvam, S., Pan, J., Liu, W., Jia, F., Lu, Y., Liu, C., Yu, W., He, J., Tan, L.S. (2015). Band alignment of HfAlO/GaN (0 0 0 1) determined by X-ray photoelectron spectroscopy: Effect of in situ SiH4 passivation. Journal of Alloys and Compounds 636 : 191-195. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jallcom.2015.02.139
dc.identifier.issn09258388
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/128133
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.jallcom.2015.02.139
dc.publisherElsevier
dc.typeArticle
dc.contributor.departmentDIVISION OF BIOENGINEERING
dc.description.doi10.1016/j.jallcom.2015.02.139
dc.description.sourcetitleJournal of Alloys and Compounds
dc.description.volume636
dc.description.page191-195
dc.identifier.isiut000351836600032
dc.published.statePublished
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.