Please use this identifier to cite or link to this item:
https://doi.org/10.1088/0957-4484/26/9/095202
DC Field | Value | |
---|---|---|
dc.title | Tuning the electronic properties of ZnO nanowire field effect transistors via surface functionalization | |
dc.contributor.author | Han C. | |
dc.contributor.author | Xiang D. | |
dc.contributor.author | Zheng M. | |
dc.contributor.author | Lin J. | |
dc.contributor.author | Zhong J. | |
dc.contributor.author | Haur Sow C. | |
dc.contributor.author | Chen W. | |
dc.date.accessioned | 2016-09-20T01:42:20Z | |
dc.date.available | 2016-09-20T01:42:20Z | |
dc.date.issued | 2015 | |
dc.identifier.citation | Han C., Xiang D., Zheng M., Lin J., Zhong J., Haur Sow C., Chen W. (2015). Tuning the electronic properties of ZnO nanowire field effect transistors via surface functionalization. Nanotechnology 26 (9). ScholarBank@NUS Repository. https://doi.org/10.1088/0957-4484/26/9/095202 | |
dc.identifier.issn | 9574484 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/127855 | |
dc.publisher | Institute of Physics Publishing | |
dc.type | Article | |
dc.contributor.department | CHEMISTRY | |
dc.description.doi | 10.1088/0957-4484/26/9/095202 | |
dc.description.sourcetitle | Nanotechnology | |
dc.description.volume | 26 | |
dc.description.issue | 9 | |
dc.identifier.isiut | 000349494600006 | |
dc.published.state | published | |
Appears in Collections: | Staff Publications |
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