Please use this identifier to cite or link to this item: https://doi.org/10.1109/TED.2014.2366205
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dc.titleGermanium-Tin on Si avalanche photodiode: Device design and technology demonstration
dc.contributor.authorDong, Y.
dc.contributor.authorWang, W.
dc.contributor.authorXu, X.
dc.contributor.authorGong, X.
dc.contributor.authorLei, D.
dc.contributor.authorZhou, Q.
dc.contributor.authorXu, Z.
dc.contributor.authorLoke, W.K.
dc.contributor.authorYoon, S.-F.
dc.contributor.authorLiang, G.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2016-09-09T00:50:01Z
dc.date.available2016-09-09T00:50:01Z
dc.date.issued2014
dc.identifier.citationDong, Y., Wang, W., Xu, X., Gong, X., Lei, D., Zhou, Q., Xu, Z., Loke, W.K., Yoon, S.-F., Liang, G., Yeo, Y.-C. (2014). Germanium-Tin on Si avalanche photodiode: Device design and technology demonstration. IEEE Transactions on Electron Devices 62 (1) : 128-135. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2014.2366205
dc.identifier.issn189383
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/127348
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/TED.2014.2366205
dc.publisherInstitute of Electrical and Electronics Engineers Inc.
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/TED.2014.2366205
dc.description.sourcetitleIEEE Transactions on Electron Devices
dc.description.volume62
dc.description.issue1
dc.description.page128-135
dc.identifier.isiut000346979800019
dc.published.statePublished
dc.grant.idNRF-CRP6-2010-4
dc.grant.fundingagencyNational Research Foundation
dc.grant.fundingagencyNational Research Foundation
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