Correlation of a generation-recombination center with a deep level trap in GaN

Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4914393

DC Field	Value
dc.title	Correlation of a generation-recombination center with a deep level trap in GaN
dc.contributor.author	Nguyen, Xuan Sang
dc.contributor.author	Lin, Ke
dc.contributor.author	Fitzgerald, Eugene A.
dc.contributor.author	Chua, Soojin
dc.date.accessioned	2016-09-09T00:47:20Z
dc.date.available	2016-09-09T00:47:20Z
dc.date.issued	2015
dc.identifier.citation	Nguyen, Xuan Sang, Lin, Ke, Fitzgerald, Eugene A., Chua, Soojin (2015). Correlation of a generation-recombination center with a deep level trap in GaN. Applied Physics Letters 106 (10). ScholarBank@NUS Repository. https://doi.org/10.1063/1.4914393
dc.identifier.issn	36951
dc.identifier.uri	http://scholarbank.nus.edu.sg/handle/10635/127200
dc.description.uri	http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.4914393
dc.publisher	American Institute of Physics Inc.
dc.type	Article
dc.contributor.department	ELECTRICAL & COMPUTER ENGINEERING
dc.description.doi	10.1063/1.4914393
dc.description.sourcetitle	Applied Physics Letters
dc.description.volume	106
dc.description.issue	10
dc.identifier.isiut	000351397600026
dc.published.state	Published
Appears in Collections:	Staff Publications

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