Please use this identifier to cite or link to this item: https://doi.org/10.1007/s13391-012-1107-1
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dc.titleThe effect of pressure and growth temperature on the characteristics of polycrystalline In 2Se 3 films in metal organic chemical vapor deposition
dc.contributor.authorYu, S.M.
dc.contributor.authorYoo, J.H.
dc.contributor.authorPatole, S.P.
dc.contributor.authorLee, J.H.
dc.contributor.authorYoo, J.-B.
dc.date.accessioned2016-06-02T10:30:04Z
dc.date.available2016-06-02T10:30:04Z
dc.date.issued2012-06
dc.identifier.citationYu, S.M., Yoo, J.H., Patole, S.P., Lee, J.H., Yoo, J.-B. (2012-06). The effect of pressure and growth temperature on the characteristics of polycrystalline In 2Se 3 films in metal organic chemical vapor deposition. Electronic Materials Letters 8 (3) : 245-250. ScholarBank@NUS Repository. https://doi.org/10.1007/s13391-012-1107-1
dc.identifier.issn17388090
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/125037
dc.description.abstractThis study examined the effect of the growth parameters on the characteristics of polycrystalline In 2Se 3 (IS) films using metal organic chemical vapor deposition. Trimethylindium and ditertiarybutylselenide metal organic compounds were used as the indium and selenium sources to deposit the IS films on soda lime glass. The effect of the growth pressure was examined from 10 to 80 torr. The effect of the growth temperature was studied in the range, 300°C to 500°C. Scanning electron microscopy and high resolution x-ray diffraction was used to analyze the morphological and structural properties of the deposited films. Optical absorption was used to examine the optical properties and band gap of the deposited IS films. The details of the analysis are presented. © 2012 The Korean Institute of Metals and Materials and Springer Netherlands.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1007/s13391-012-1107-1
dc.sourceScopus
dc.subjectbuffer layer
dc.subjectIn 2Se 3
dc.subjectmetal organic chemical vapor deposition
dc.subjectscanning electron microscopy
dc.subjectthin solid films
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1007/s13391-012-1107-1
dc.description.sourcetitleElectronic Materials Letters
dc.description.volume8
dc.description.issue3
dc.description.page245-250
dc.identifier.isiut000305771000002
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