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Please use this identifier to cite or link to this item: https://doi.org/10.1109/TCSII.2014.2386231
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dc.titleA time-domain band-gap temperature sensor in SOI CMOS for higherature applications
dc.contributor.authorPathrose, Jerrin Vareed
dc.contributor.authorLiu, Chengye
dc.contributor.authorChai, Tshun Chuan Kevin
dc.contributor.authorXu, Yong-Ping
dc.date.accessioned2016-04-29T06:06:37Z
dc.date.available2016-04-29T06:06:37Z
dc.date.issued2015
dc.identifier.citationPathrose, Jerrin Vareed, Liu, Chengye, Chai, Tshun Chuan Kevin, Xu, Yong-Ping (2015). A time-domain band-gap temperature sensor in SOI CMOS for higherature applications. IEEE Transactions on Circuits and Systems II: Express Briefs 62 (5) : 436-440. ScholarBank@NUS Repository. https://doi.org/10.1109/TCSII.2014.2386231
dc.identifier.issn15497747
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/123472
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/TCSII.2014.2386231
dc.publisherInstitute of Electrical and Electronics Engineers Inc.
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/TCSII.2014.2386231
dc.description.sourcetitleIEEE Transactions on Circuits and Systems II: Express Briefs
dc.description.volume62
dc.description.issue5
dc.description.page436-440
dc.identifier.isiut000353636400004
dc.published.statePublished
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