Air-stable transport in graphene-contacted, fully encapsulated ultrathin black phosphorus-based field-effect transistors

Please use this identifier to cite or link to this item: https://doi.org/10.1021/acsnano.5b00289

DC Field	Value
dc.title	Air-stable transport in graphene-contacted, fully encapsulated ultrathin black phosphorus-based field-effect transistors
dc.contributor.author	Avsar,Ahmet
dc.contributor.author	Vera Marun, Ivan J.
dc.contributor.author	Tan, Jun You
dc.contributor.author	Watanabe, Kenji
dc.contributor.author	Taniguchi, Takashi
dc.contributor.author	Antonio H. Castro Neto
dc.contributor.author	Ozyilmaz,Barbaros
dc.date.accessioned	2016-04-29T06:03:12Z
dc.date.available	2016-04-29T06:03:12Z
dc.date.issued	2015
dc.identifier.citation	Avsar,Ahmet, Vera Marun, Ivan J., Tan, Jun You, Watanabe, Kenji, Taniguchi, Takashi, Antonio H. Castro Neto, Ozyilmaz,Barbaros (2015). Air-stable transport in graphene-contacted, fully encapsulated ultrathin black phosphorus-based field-effect transistors. ACS Nano 9 (4) : 4138-4145. ScholarBank@NUS Repository. https://doi.org/10.1021/acsnano.5b00289
dc.identifier.issn	19360851
dc.identifier.uri	http://scholarbank.nus.edu.sg/handle/10635/123191
dc.description.uri	https://pubs.acs.org/doi/10.1021/acsnano.5b00289
dc.publisher	American Chemical Society
dc.type	Article
dc.contributor.department	PHYSICS
dc.description.doi	10.1021/acsnano.5b00289
dc.description.sourcetitle	ACS Nano
dc.description.volume	9
dc.description.issue	4
dc.description.page	4138-4145
dc.identifier.isiut	000353867000079
dc.published.state	Published
Appears in Collections:	Staff Publications

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