Please use this identifier to cite or link to this item:
|Spatially resolved emitter saturation current by photoluminescence imaging
|Hameiri, Z.,Chaturvedi, P.,Juhl, M.K.,Trupke, T. (2013). Spatially resolved emitter saturation current by photoluminescence imaging. Conference Record of the IEEE Photovoltaic Specialists Conference : 664-668. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/PVSC.2013.6744237" target="_blank">https://doi.org/10.1109/PVSC.2013.6744237</a>
|Heavily doped regions (in particular emitters) in silicon wafer solar cells are a major source of recombination which limits the open-circuit voltage, the short-circuit current and hence the efficiency. These regions are typically characterized by the emitter saturation current density, which is commonly calculated from the plot of the inverse effective lifetime (corrected for Auger recombination) as a function of minority carrier concentration. In this paper we present a simple spatially resolved emitter saturation current density measurement method which is based on photoluminescence imaging. The spatially averaged values obtained by the proposed method were found to be in a good agreement with the ones obtained by the standard photoconductance-based method. The application of the method to a selective emitter solar cell structure is demonstrated. © 2013 IEEE.
|Charge carrier lifetime
|SOLAR ENERGY RESEARCH INST OF S'PORE
|Conference Record of the IEEE Photovoltaic Specialists Conference
|Appears in Collections:
Show simple item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.