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Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4812835
DC FieldValue
dc.titleImaging the local ideality factor by contactless photoluminescence measurement
dc.contributor.authorHameiri, Z.
dc.contributor.authorChaturvedi, P.
dc.contributor.authorMcIntosh, K.R.
dc.date.accessioned2014-12-12T08:00:48Z
dc.date.available2014-12-12T08:00:48Z
dc.date.issued2013-07-08
dc.identifier.citationHameiri, Z., Chaturvedi, P., McIntosh, K.R. (2013-07-08). Imaging the local ideality factor by contactless photoluminescence measurement. Applied Physics Letters 103 (2) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4812835
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/117043
dc.description.abstractA contactless method to image the local ideality factor of silicon wafers and silicon solar cells is introduced. The method is based on photoluminescence imaging and can be applied throughout the solar cell fabrication process, even before junction formation. The local ideality factor measured by the proposed method is found to be in good agreement with that measured by Suns-V oc. Examples of its application are given for fully and partially fabricated solar cells. © 2013 AIP Publishing LLC.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.4812835
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentSOLAR ENERGY RESEARCH INST OF S'PORE
dc.description.doi10.1063/1.4812835
dc.description.sourcetitleApplied Physics Letters
dc.description.volume103
dc.description.issue2
dc.description.page-
dc.description.codenAPPLA
dc.identifier.isiut000321761000087
Appears in Collections:Staff Publications

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