Please use this identifier to cite or link to this item: https://doi.org/10.1039/c2ce26510a
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dc.titleMolten-salt-mediated synthesis of SiC nanowires for microwave absorption applications
dc.contributor.authorWu, R.
dc.contributor.authorZhou, K.
dc.contributor.authorYang, Z.
dc.contributor.authorQian, X.
dc.contributor.authorWei, J.
dc.contributor.authorLiu, L.
dc.contributor.authorHuang, Y.
dc.contributor.authorKong, L.
dc.contributor.authorWang, L.
dc.date.accessioned2014-12-12T07:50:10Z
dc.date.available2014-12-12T07:50:10Z
dc.date.issued2013-01-21
dc.identifier.citationWu, R., Zhou, K., Yang, Z., Qian, X., Wei, J., Liu, L., Huang, Y., Kong, L., Wang, L. (2013-01-21). Molten-salt-mediated synthesis of SiC nanowires for microwave absorption applications. CrystEngComm 15 (3) : 570-576. ScholarBank@NUS Repository. https://doi.org/10.1039/c2ce26510a
dc.identifier.issn14668033
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/116462
dc.description.abstractSilicon carbide (SiC) nanowires were synthesized by a reaction of multiwall carbon nanotubes (MWCNTs) and silicon vapor from molten salt medium at 1250 °C. The phase, morphology, and microstructure of the nanowires were systemically characterized by X-ray diffraction, field emission scanning electron microscopy, and high resolution transmission electron microscopy. The results revealed that the nanowires were of single-crystalline β-SiC phase with the growth direction along [111] and had diameters of 20-80 nm and lengths up to several tens of micrometers. The molten salt introduced facilitated the evaporation of Si (vapor) onto MWCNTs (solid) and the growth of SiC nanowires followed the vapor-solid process. The investigation of microwave absorbability indicated that a minimum reflection loss of -17.4 dB at 11.2 GHz could be achieved with 30 wt% SiC nanowires as the filler in the silicone matrix. The attenuation of microwave could be attributed to the dielectric loss and a possible absorption mechanism was also discussed. © 2013 The Royal Society of Chemistry.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1039/c2ce26510a
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentTEMASEK LABORATORIES
dc.description.doi10.1039/c2ce26510a
dc.description.sourcetitleCrystEngComm
dc.description.volume15
dc.description.issue3
dc.description.page570-576
dc.description.codenCRECF
dc.identifier.isiut000312197600019
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