Growth and optical properties of highly uniform and periodic InGaN nanostructures

Abstract

A study was conducted to fabricate highly uniform and periodic indium gallium nitride (InGaN) nanodot and nanoring arrays, using nanoscale selective area epitaxy (NSAE) electron beam lithography (EBL)-patterned templates. The InGaN nanostructures were grown in nanoporous silicon dioxide (SiO2) templates on GAN and sapphire substrates. An 80 nm SiO2layer was deposited onto the GAN by plasma-enhanced chemical vapor deposition (PEDVD), while PMMA resist was coated onto the SiO2 by spin coating. The nanostructures were defined by EBL at an acceleration voltage of 30 keV, using an FEI Sirion 200 field emission scanning electron microscope that was equipped with a JC Nabity nanometer pattern generation system. It was observed that InGAN nanostructured arrays produced using the technique had better optical properties and uniform sizes.