Please use this identifier to cite or link to this item: https://doi.org/10.1039/b927274g
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dc.titleKinetics of Ge diffusion, desorption and pit formation dynamics during annealing of Si0.8Ge0.2/Si(001) virtual substrates
dc.contributor.authorZhang, Z.
dc.contributor.authorPan, J.S.
dc.contributor.authorZhang, J.
dc.contributor.authorTok, E.S.
dc.date.accessioned2014-12-12T07:32:28Z
dc.date.available2014-12-12T07:32:28Z
dc.date.issued2010-07-14
dc.identifier.citationZhang, Z., Pan, J.S., Zhang, J., Tok, E.S. (2010-07-14). Kinetics of Ge diffusion, desorption and pit formation dynamics during annealing of Si0.8Ge0.2/Si(001) virtual substrates. Physical Chemistry Chemical Physics 12 (26) : 7171-7183. ScholarBank@NUS Repository. https://doi.org/10.1039/b927274g
dc.identifier.issn14639076
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/115786
dc.description.abstractThermal stability of Si0.8Ge0.2/Si(001) virtual substrates (VS) is studied as a function of annealing temperature and time by X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). Two regimes describing different Ge behavior are observed when the Si 0.8Ge0.2 VS is annealed. Heating the substrate from room temperature to 500 °C results in some degree of Ge segregation. The surface morphology however remains relatively smooth and there is no formation of 3D islands on the surface. Above 500 °C, Ge is preferentially lost from the surface and microscopic pits with edges aligned along 〈110〉 azimuth are formed. As temperature increases, Ge% decreases and the size of pits also increases. The decrease in Ge% and the formation of holes at the surface are attributed to Ge desorption from the surface. A kinetic model involving diffusion and desorption processes is proposed to describe the Ge behavior and pits formation in this regime. © 2010 the Owner Societies.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1039/b927274g
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentINST OF MATERIALS RESEARCH & ENGINEERING
dc.contributor.departmentPHYSICS
dc.description.doi10.1039/b927274g
dc.description.sourcetitlePhysical Chemistry Chemical Physics
dc.description.volume12
dc.description.issue26
dc.description.page7171-7183
dc.description.codenPPCPF
dc.identifier.isiut000279098300032
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