Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.sse.2009.05.002
DC FieldValue
dc.titleTunable patterned ferroelectric parallel-plate varactors for matching network
dc.contributor.authorZhang, X.-Y.
dc.contributor.authorWang, P.
dc.contributor.authorXu, F.
dc.contributor.authorOng, C.K.
dc.date.accessioned2014-12-12T07:14:23Z
dc.date.available2014-12-12T07:14:23Z
dc.date.issued2009-09
dc.identifier.citationZhang, X.-Y., Wang, P., Xu, F., Ong, C.K. (2009-09). Tunable patterned ferroelectric parallel-plate varactors for matching network. Solid-State Electronics 53 (9) : 993-997. ScholarBank@NUS Repository. https://doi.org/10.1016/j.sse.2009.05.002
dc.identifier.issn00381101
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/115343
dc.description.abstractThe columnar textured Ba0.5Sr0.5TiO3 (BST) thin film was well grown on the Pt(1 1 1)/Si substrate by pulsed laser deposition. A tunable impedance matching network based on the parallel-plate capacitor with Au/BST/Pt structure was fabricated and tested. The BST thin films in the varactors were patterned only on the selected area of substrate in order to reduce loss and eliminate undesired modes. The dielectric properties of BST film with parallel-plate structure were investigated and compared systematically in the wide frequency range from 1 kHz to 1.6 GHz. The tunability of BST varactor reached up to 25.1% at 100 kHz and 21.8% at 0.9 GHz under 10 V dc bias, respectively. Compared with the impedance matching network based on coplanar interdigital capacitors using 100 V dc voltages, the performance of tunable impedance matching showed a significant improvement only at the low biased voltage of 10 V. Crown Copyright © 2009.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.sse.2009.05.002
dc.sourceScopus
dc.subjectCoplanar waveguide
dc.subjectParallel-plate capacitors
dc.subjectPatterned ferroelectric BST thin film
dc.subjectTunable impedance matching network
dc.typeArticle
dc.contributor.departmentTEMASEK LABORATORIES
dc.contributor.departmentPHYSICS
dc.description.doi10.1016/j.sse.2009.05.002
dc.description.sourcetitleSolid-State Electronics
dc.description.volume53
dc.description.issue9
dc.description.page993-997
dc.description.codenSSELA
dc.identifier.isiut000269091900012
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