Please use this identifier to cite or link to this item: https://doi.org/10.1088/0268-1242/19/7/027
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dc.titleThe effect of ultra-thin Al 2O 3 layers on the dielectric properties of LaAlO 3 thin film on silicon
dc.contributor.authorYan, L.
dc.contributor.authorKong, L.B.
dc.contributor.authorOng, C.K.
dc.date.accessioned2014-12-12T07:14:04Z
dc.date.available2014-12-12T07:14:04Z
dc.date.issued2004-07
dc.identifier.citationYan, L., Kong, L.B., Ong, C.K. (2004-07). The effect of ultra-thin Al 2O 3 layers on the dielectric properties of LaAlO 3 thin film on silicon. Semiconductor Science and Technology 19 (7) : 935-938. ScholarBank@NUS Repository. https://doi.org/10.1088/0268-1242/19/7/027
dc.identifier.issn02681242
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/115320
dc.description.abstractHigh-k LaAlO 3 (LAO) thin films with and without Al 2O 3 buffer layers were deposited on n-type silicon substrates using pulsed laser deposition method. The dielectric constant of the LAO thin film increased from 5.2 to 23.1 as its thickness increased from 20 to 500 A. The effective dielectric constants of the LAO (120 Å)/Si and LAO(105 Å)/Al 2O 3(15 Å)/Si were 12.5 and 23.2, respectively. The flatband voltage of the LAO(105 Å)/ Al 2O 3(15 Å)/Si sample decreased from 2.0 V to 1.2 V after the sample was annealed for 5 min at 850°C in air atmosphere, while the dielectric constant value of the annealed sample did not change. It was found that a 15 Å thick Al 2O 3 buffer layer could enhance the dielectric properties of the LAO thin film, making it one of the good candidates for high-k materials.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentTEMASEK LABORATORIES
dc.contributor.departmentPHYSICS
dc.contributor.departmentINSTITUTE OF ENGINEERING SCIENCE
dc.description.doi10.1088/0268-1242/19/7/027
dc.description.sourcetitleSemiconductor Science and Technology
dc.description.volume19
dc.description.issue7
dc.description.page935-938
dc.description.codenSSTEE
dc.identifier.isiut000222622200031
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