Please use this identifier to cite or link to this item: https://doi.org/10.1021/ja049560e
Title: Probe-induced native oxide decomposition and localized oxidation on 6H-SiC (0001) surface: An atomic force microscopy investigation
Authors: Xie, X.N. 
Chung, H.J. 
Xu, H. 
Xu, X. 
Sow, C.H. 
Wee, A.T.S. 
Issue Date: 23-Jun-2004
Citation: Xie, X.N., Chung, H.J., Xu, H., Xu, X., Sow, C.H., Wee, A.T.S. (2004-06-23). Probe-induced native oxide decomposition and localized oxidation on 6H-SiC (0001) surface: An atomic force microscopy investigation. Journal of the American Chemical Society 126 (24) : 7665-7675. ScholarBank@NUS Repository. https://doi.org/10.1021/ja049560e
Abstract: We report, for the first time, the native oxide decomposition/etching and direct local oxide growth on 6H-SiC (0001) surface induced by atomic force microscopy (AFM). Surface native oxide was decomposed and assembled into protruded lines when the negatively biased AFM tip was scanned over surface areas. The mechanism of decomposition was found to be governed by the Fowler-Nordheim emission current enhanced by the negatively biased AFM tip. Direct oxide growth on the SiC surface was achieved when the AFM tip was immobilized and longer bias duration applied. In particular, the aspect ratio of oxide grown on SiC was found to be several times higher than that on the Si surface. The improved aspect ratio on SiC was attributed to the anisotropic OH- diffusion involved in vertical and lateral oxidation along the polar and nonpolar directions such as [0001] and [1120] axis in SiC crystal. The electron transport in the above AFM grown oxide on SiC was further investigated by I- V characteristics. The dielectrical strength of AFM oxide against degradation and breakdown under electrical stressing was evaluated.
Source Title: Journal of the American Chemical Society
URI: http://scholarbank.nus.edu.sg/handle/10635/115244
ISSN: 00027863
DOI: 10.1021/ja049560e
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