Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1757652
DC FieldValue
dc.titleMagnetic order in Co-doped and (Mn, Co) codoped ZnO thin films by pulsed laser deposition
dc.contributor.authorYan, L.
dc.contributor.authorOng, C.K.
dc.contributor.authorRao, X.S.
dc.date.accessioned2014-12-12T07:12:09Z
dc.date.available2014-12-12T07:12:09Z
dc.date.issued2004-07-01
dc.identifier.citationYan, L., Ong, C.K., Rao, X.S. (2004-07-01). Magnetic order in Co-doped and (Mn, Co) codoped ZnO thin films by pulsed laser deposition. Journal of Applied Physics 96 (1) : 508-511. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1757652
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/115179
dc.description.abstractThe fabrication on Al2O3 (0001) using pulsed laser deposition was investigated of Co-doped and (Mn, Co) codoped ZnO thin films. The doped ZnO thin films with well wurtzite structures were deposited at a low temperature of 400 °C and low oxygen pressure of 5×10-5 Pa. The three doped ZnO films were found to show room temperature (290 k) ferromagnetism, with saturated magnetic moments. The resistance vs temperature measurements show that the Co-doped ZnO show metallic conductivity with low resistance, while the (Mn, Co) codoped ZnO is semiconductor with high resistance.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1757652
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.contributor.departmentTEMASEK LABORATORIES
dc.contributor.departmentINSTITUTE OF ENGINEERING SCIENCE
dc.description.doi10.1063/1.1757652
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume96
dc.description.issue1
dc.description.page508-511
dc.description.codenJAPIA
dc.identifier.isiut000222093300081
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