Leakage behaviors of ferroelectric (Bi 3.15Nd 0.85) Ti 3O 12 thin film derived from RF sputtering

Please use this identifier to cite or link to this item: https://doi.org/10.1007/s00339-011-6531-9

Title:	Leakage behaviors of ferroelectric (Bi 3.15Nd 0.85) Ti 3O 12 thin film derived from RF sputtering
Authors:	Gao, X.S. Wang, J.
Issue Date:	Dec-2011
Citation:	Gao, X.S., Wang, J. (2011-12). Leakage behaviors of ferroelectric (Bi 3.15Nd 0.85) Ti 3O 12 thin film derived from RF sputtering. Applied Physics A: Materials Science and Processing 105 (4) : 997-1001. ScholarBank@NUS Repository. https://doi.org/10.1007/s00339-011-6531-9
Abstract:	The leakage behaviors of ferroelectric layered-perovskite (Bi 3.15Nd 0.85)Ti 3O 12 (BNdT) thin films deposited on Pt/TiO 2/Ti/Si substrates by RF sputtering have been carefully investigated. Their I-V curves exhibit a rich diversity of conducting behaviors at different temperature and voltage ranges, which may be accounted for by various conducting mechanisms, including Ohmic behavior, Schottky emission, space-charge-limited current (SCLC), and Fowler-Nordheim tunneling effects. Their time-dependent leakage currents show a nearly linear relationship with respect to logarithmic relaxation time at initial stage (400 s) showing characteristics of ionic space-charge limit current relaxation. © 2011 Springer-Verlag.
Source Title:	Applied Physics A: Materials Science and Processing
URI:	http://scholarbank.nus.edu.sg/handle/10635/115168
ISSN:	09478396
DOI:	10.1007/s00339-011-6531-9
Appears in Collections:	Staff Publications

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