Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/114535
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dc.titleTrap signatures of As precipitates and As-antisite-related defects in GaAs epilayers grown by molecular beam epitaxy at low temperatures
dc.contributor.authorGoo, C.H.
dc.contributor.authorLau, W.S.
dc.contributor.authorChong, T.C.
dc.contributor.authorTan, L.S.
dc.date.accessioned2014-12-02T08:05:47Z
dc.date.available2014-12-02T08:05:47Z
dc.date.issued1996-10-21
dc.identifier.citationGoo, C.H.,Lau, W.S.,Chong, T.C.,Tan, L.S. (1996-10-21). Trap signatures of As precipitates and As-antisite-related defects in GaAs epilayers grown by molecular beam epitaxy at low temperatures. Applied Physics Letters 69 (17) : 2543-2545. ScholarBank@NUS Repository.
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/114535
dc.description.abstractDespite many separate studies of the two dominant defects, i.e., As precipitates and arsenic-antisite (AsGa)-related traps, in GaAs epilayers grown by molecular beam epitaxy at low temperatures, they are seldom examined simultaneously. In this letter, we report the detection of both defects in electron trap spectrum obtained by zero quiescent bias voltage transient current spectroscopy. The As precipitates appear as a broad continuum of states in the lower temperature region (
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.sourcetitleApplied Physics Letters
dc.description.volume69
dc.description.issue17
dc.description.page2543-2545
dc.description.codenAPPLA
dc.identifier.isiutNOT_IN_WOS
Appears in Collections:Staff Publications

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