Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.tsf.2005.09.166
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dc.titleComparative investigation of TaN and SiCN barrier layer for Cu/ultra low k integration
dc.contributor.authorYang, L.Y.
dc.contributor.authorZhang, D.H.
dc.contributor.authorLi, C.Y.
dc.contributor.authorLiu, R.
dc.contributor.authorLu, P.W.
dc.contributor.authorFoo, P.D.
dc.contributor.authorWee, A.T.S.
dc.date.accessioned2014-11-28T09:12:08Z
dc.date.available2014-11-28T09:12:08Z
dc.date.issued2006-05-10
dc.identifier.citationYang, L.Y., Zhang, D.H., Li, C.Y., Liu, R., Lu, P.W., Foo, P.D., Wee, A.T.S. (2006-05-10). Comparative investigation of TaN and SiCN barrier layer for Cu/ultra low k integration. Thin Solid Films 504 (1-2) : 265-268. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2005.09.166
dc.identifier.issn00406090
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/113110
dc.description.abstractThis paper reports comparative studies of TaN and SiCN as barrier for Cu-porous dielectric (k < 2.3) integration using various techniques. It was found that SiCN dielectric is much better than TaN for the Cu-Ultra low k (ULK) integration. Upon thermal annealing at 400 °C for different periods of time, TEM images revealed strong intermixing at the two interfaces of Cu/TaN/ULK structures but no sign of diffusion in Cu/SiCN/ULK structure even after being annealed at 400 °C for 150 min. The strong intermixing in the Cu/TaN/ULK structure results from grain boundaries in the TaN film and porosity of the dielectric, while the excellent reliability of the Cu/SiCN/ULK dielectric is ascribed to the amorphous structure and high thermal stability of the SiCN film.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.tsf.2005.09.166
dc.sourceScopus
dc.subjectCu metallization
dc.subjectSiCN
dc.subjectTaN
dc.subjectUltra low k polymer
dc.typeConference Paper
dc.contributor.departmentINSTITUTE OF ENGINEERING SCIENCE
dc.contributor.departmentPHYSICS
dc.description.doi10.1016/j.tsf.2005.09.166
dc.description.sourcetitleThin Solid Films
dc.description.volume504
dc.description.issue1-2
dc.description.page265-268
dc.description.codenTHSFA
dc.identifier.isiut000236486200063
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