Please use this identifier to cite or link to this item:
https://doi.org/10.1016/j.tsf.2005.09.166
DC Field | Value | |
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dc.title | Comparative investigation of TaN and SiCN barrier layer for Cu/ultra low k integration | |
dc.contributor.author | Yang, L.Y. | |
dc.contributor.author | Zhang, D.H. | |
dc.contributor.author | Li, C.Y. | |
dc.contributor.author | Liu, R. | |
dc.contributor.author | Lu, P.W. | |
dc.contributor.author | Foo, P.D. | |
dc.contributor.author | Wee, A.T.S. | |
dc.date.accessioned | 2014-11-28T09:12:08Z | |
dc.date.available | 2014-11-28T09:12:08Z | |
dc.date.issued | 2006-05-10 | |
dc.identifier.citation | Yang, L.Y., Zhang, D.H., Li, C.Y., Liu, R., Lu, P.W., Foo, P.D., Wee, A.T.S. (2006-05-10). Comparative investigation of TaN and SiCN barrier layer for Cu/ultra low k integration. Thin Solid Films 504 (1-2) : 265-268. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2005.09.166 | |
dc.identifier.issn | 00406090 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/113110 | |
dc.description.abstract | This paper reports comparative studies of TaN and SiCN as barrier for Cu-porous dielectric (k < 2.3) integration using various techniques. It was found that SiCN dielectric is much better than TaN for the Cu-Ultra low k (ULK) integration. Upon thermal annealing at 400 °C for different periods of time, TEM images revealed strong intermixing at the two interfaces of Cu/TaN/ULK structures but no sign of diffusion in Cu/SiCN/ULK structure even after being annealed at 400 °C for 150 min. The strong intermixing in the Cu/TaN/ULK structure results from grain boundaries in the TaN film and porosity of the dielectric, while the excellent reliability of the Cu/SiCN/ULK dielectric is ascribed to the amorphous structure and high thermal stability of the SiCN film. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.tsf.2005.09.166 | |
dc.source | Scopus | |
dc.subject | Cu metallization | |
dc.subject | SiCN | |
dc.subject | TaN | |
dc.subject | Ultra low k polymer | |
dc.type | Conference Paper | |
dc.contributor.department | INSTITUTE OF ENGINEERING SCIENCE | |
dc.contributor.department | PHYSICS | |
dc.description.doi | 10.1016/j.tsf.2005.09.166 | |
dc.description.sourcetitle | Thin Solid Films | |
dc.description.volume | 504 | |
dc.description.issue | 1-2 | |
dc.description.page | 265-268 | |
dc.description.coden | THSFA | |
dc.identifier.isiut | 000236486200063 | |
Appears in Collections: | Staff Publications |
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