Please use this identifier to cite or link to this item: https://doi.org/10.1116/1.1535925
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dc.titleInvestigation of boron penetration through decoupled plasma nitrided gate oxide using backside secondary ion mass spectrometry depth profiling
dc.contributor.authorYeo, K.L.
dc.contributor.authorWee, A.T.S.
dc.contributor.authorLiu, R.
dc.contributor.authorZhou, F.F.
dc.contributor.authorSee, A.
dc.date.accessioned2014-11-28T09:11:49Z
dc.date.available2014-11-28T09:11:49Z
dc.date.issued2003-01
dc.identifier.citationYeo, K.L., Wee, A.T.S., Liu, R., Zhou, F.F., See, A. (2003-01). Investigation of boron penetration through decoupled plasma nitrided gate oxide using backside secondary ion mass spectrometry depth profiling. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 21 (1 SPEC.) : 193-197. ScholarBank@NUS Repository. https://doi.org/10.1116/1.1535925
dc.identifier.issn10711023
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/113085
dc.description.abstractSecondary ion mass spectrometry (SIMS) was used to study boron penetration through different nitrided thin gate oxides. It was found that the reliability of nitrided thin gate oxide requires the nitrogen dose and nitridation process for an effective diffusion barrier to be optimized. As compared to conventional frontside SIMS depth profiling of an activated boron profile in a polysilicon gate stack using 0.5 keV O2 +, the backside depth profile showed a significant improvement in depth resolution and can give a more accurate quantification of boron penetration through the gate oxide. Using the "CsM+" technique, it was shown that nitrogen remains in the oxide layer, and the broadening observed in the nitrogen profiles using conventional SIMs is due to ion beam effects.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1116/1.1535925
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentINSTITUTE OF ENGINEERING SCIENCE
dc.contributor.departmentPHYSICS
dc.description.doi10.1116/1.1535925
dc.description.sourcetitleJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
dc.description.volume21
dc.description.issue1 SPEC.
dc.description.page193-197
dc.description.codenJVTBD
dc.identifier.isiut000182603900036
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