Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.1510843
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dc.titleExcimer laser-induced Ti silicidation to eliminate the fine-line effect for integrated circuit device fabrication
dc.contributor.authorChen, S.Y.
dc.contributor.authorShen, Z.X.
dc.contributor.authorXu, S.Y.
dc.contributor.authorOng, C.K.
dc.contributor.authorSee, A.K.
dc.contributor.authorChan, L.H.
dc.date.accessioned2014-11-28T09:11:45Z
dc.date.available2014-11-28T09:11:45Z
dc.date.issued2002-11
dc.identifier.citationChen, S.Y., Shen, Z.X., Xu, S.Y., Ong, C.K., See, A.K., Chan, L.H. (2002-11). Excimer laser-induced Ti silicidation to eliminate the fine-line effect for integrated circuit device fabrication. Journal of the Electrochemical Society 149 (11) : G609-G612. ScholarBank@NUS Repository. https://doi.org/10.1149/1.1510843
dc.identifier.issn00134651
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/113079
dc.description.abstractIn this paper laser thermal processing (LTP) is applied to induce the Ti silicide formation in replacement of rapid thermal annealing (RTA) in narrow lines. Results show that the C40 TiSi2 is synthesized after LTP in both large and small features. With this interfacial C40 TiSi2, the C54 TiSi2-phase formation temperature can be lowered by 100°C during subsequent annealing. The C40-C54-phase transition is also achievable with low temperature treatment. Most importantly, the C54 TiSi2 growth is linewidth independent down to at least 0.25 μm using LTP followed by RTA. LTP provides a possible technique to extend the application of TiSi2 to subquartermicrometer technologies.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1149/1.1510843
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.contributor.departmentINSTITUTE OF ENGINEERING SCIENCE
dc.description.doi10.1149/1.1510843
dc.description.sourcetitleJournal of the Electrochemical Society
dc.description.volume149
dc.description.issue11
dc.description.pageG609-G612
dc.description.codenJESOA
dc.identifier.isiut000178620700055
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