Please use this identifier to cite or link to this item: https://doi.org/10.1088/0953-8984/13/1/302
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dc.titleEffect of the deposition temperature on the low-field magnetoresistance of polycrystalline La0.5Sr0.5MnO3 thin films produced by pulsed laser deposition
dc.contributor.authorLiu, J.-M.
dc.contributor.authorYuan, G.L.
dc.contributor.authorHuang, Q.
dc.contributor.authorLi, J.
dc.contributor.authorOng, C.K.
dc.contributor.authorLiu, Z.G.
dc.contributor.authorDu, Y.W.
dc.date.accessioned2014-11-28T09:11:43Z
dc.date.available2014-11-28T09:11:43Z
dc.date.issued2001-01-08
dc.identifier.citationLiu, J.-M., Yuan, G.L., Huang, Q., Li, J., Ong, C.K., Liu, Z.G., Du, Y.W. (2001-01-08). Effect of the deposition temperature on the low-field magnetoresistance of polycrystalline La0.5Sr0.5MnO3 thin films produced by pulsed laser deposition. Journal of Physics Condensed Matter 13 (1) : 11-23. ScholarBank@NUS Repository. https://doi.org/10.1088/0953-8984/13/1/302
dc.identifier.issn09538984
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/113077
dc.description.abstractPulsed laser deposition of La0.5Sr0.5MnO3 (LSMO) thin films on quartz wafers at different deposition temperatures has been carried out. The microstructural, electrical and low-field magnetotransport properties of these films are evaluated as functions of the deposition temperature. The film crystallinity depends substantially on the deposition temperature. Significantly enhanced low-field magnetoresistance for the samples deposited from 570 °C to 600 °C, in which amorphous phase and polycrystalline phase coexist, is observed. The electrical and low-field magnetotransport properties of the thin films are explained by the two-channel model where insulating channels of variable-range-hopping conduction and metallic ones coexist.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.contributor.departmentINSTITUTE OF ENGINEERING SCIENCE
dc.description.doi10.1088/0953-8984/13/1/302
dc.description.sourcetitleJournal of Physics Condensed Matter
dc.description.volume13
dc.description.issue1
dc.description.page11-23
dc.description.codenJCOME
dc.identifier.isiut000166632600007
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