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Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/112976
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dc.titleEffect of oxide field on hot carrier induced degradation in CMOS gate oxide
dc.contributor.authorZhao, S.P.
dc.contributor.authorTaylor, S.
dc.date.accessioned2014-11-28T08:12:54Z
dc.date.available2014-11-28T08:12:54Z
dc.date.issued1995
dc.identifier.citationZhao, S.P.,Taylor, S. (1995). Effect of oxide field on hot carrier induced degradation in CMOS gate oxide. Proceedings of the International Symposium on the Physical 7 Failure Analysis of Integrated Circuits, IPFA : 91-95. ScholarBank@NUS Repository.
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/112976
dc.description.abstractIn this study, substrate hot electron injection (SHE) experiments have been carried out on n-MOSFETs. The effects of the oxide field on the hot electron induced degradation has been studied systematically. The oxide field dependence of the trapping over the field range from 0.5 to 6 MV/cm for different injection levels has been investigated.
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentINSTITUTE OF MICROELECTRONICS
dc.description.sourcetitleProceedings of the International Symposium on the Physical 7 Failure Analysis of Integrated Circuits, IPFA
dc.description.page91-95
dc.description.coden234
dc.identifier.isiutNOT_IN_WOS
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