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https://scholarbank.nus.edu.sg/handle/10635/112975
| Title: | Dummy gated radio frequency VDMOSFET with high breakdown voltage and low feedback capacitance | Authors: | Xu, S. Ren, C. Foo, P.-D. Liu, Y. Su, Y. |
Keywords: | Feedback capacitance VDMOSFET |
Issue Date: | 2000 | Citation: | Xu, S.,Ren, C.,Foo, P.-D.,Liu, Y.,Su, Y. (2000). Dummy gated radio frequency VDMOSFET with high breakdown voltage and low feedback capacitance. IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD) : 385-388. ScholarBank@NUS Repository. | Abstract: | In this paper, a novel radio frequency power device called dummy gated VDMOS has been proposed and demonstrated experimentally. The new device is produced using the standard RF VDMOS process technology. An improvement in breakdown voltage by 20% is realized, while the feedback capacitance Crss is reduced by three times leading to a desired HF performance and high reliability. | Source Title: | IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD) | URI: | http://scholarbank.nus.edu.sg/handle/10635/112975 |
| Appears in Collections: | Staff Publications |
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