Please use this identifier to cite or link to this item: https://doi.org/10.1088/0268-1242/18/7/101
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dc.titleAmorphous (CeO2)0.67(Al2O3)0.33 high-k gate dielectric thin films on silicon
dc.contributor.authorYan, L.
dc.contributor.authorKong, L.B.
dc.contributor.authorLi, Q.
dc.contributor.authorOng, C.K.
dc.date.accessioned2014-11-28T01:54:44Z
dc.date.available2014-11-28T01:54:44Z
dc.date.issued2003-07
dc.identifier.citationYan, L., Kong, L.B., Li, Q., Ong, C.K. (2003-07). Amorphous (CeO2)0.67(Al2O3)0.33 high-k gate dielectric thin films on silicon. Semiconductor Science and Technology 18 (7) : L39-L41. ScholarBank@NUS Repository. https://doi.org/10.1088/0268-1242/18/7/101
dc.identifier.issn02681242
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/111657
dc.description.abstractThe electrical and physical characteristics of (CeO2)0.67(Al2O3)0.33 (CAO), for use in metal-oxide-semiconductor gate dielectric applications were investigated. The CAO thin films have been deposited at 650°C in different oxygen pressures by pulsed laser deposition. The CAO thin film was found to exhibit excellent characteristics such as atomic-scale smooth surface, thin interfacial layer, high accumulation capacitance and low leakage current density. This demonstrates that CAO thin film is a promising gate dielectric replacing SiO2 in future for its good physical and electrical properties.
dc.sourceScopus
dc.typeOthers
dc.contributor.departmentTEMASEK LABORATORIES
dc.contributor.departmentPHYSICS
dc.contributor.departmentINSTITUTE OF ENGINEERING SCIENCE
dc.description.doi10.1088/0268-1242/18/7/101
dc.description.sourcetitleSemiconductor Science and Technology
dc.description.volume18
dc.description.issue7
dc.description.pageL39-L41
dc.description.codenSSTEE
dc.identifier.isiut000184388500001
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