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Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.ssc.2003.09.004
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dc.titleIn situ XRD analysis of Ni(Pt)/Si(100) reactions in low temperature regime ≤400 °C
dc.contributor.authorLee, P.S.
dc.contributor.authorPey, K.L.
dc.contributor.authorMangelinck, D.
dc.contributor.authorDing, J.
dc.contributor.authorChan, L.
dc.date.accessioned2014-10-29T08:42:48Z
dc.date.available2014-10-29T08:42:48Z
dc.date.issued2003-12
dc.identifier.citationLee, P.S., Pey, K.L., Mangelinck, D., Ding, J., Chan, L. (2003-12). In situ XRD analysis of Ni(Pt)/Si(100) reactions in low temperature regime ≤400 °C. Solid State Communications 128 (9-10) : 325-328. ScholarBank@NUS Repository. https://doi.org/10.1016/j.ssc.2003.09.004
dc.identifier.issn00381098
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/107332
dc.description.abstractThe key feature of this paper is to highlight the use of an in situ XRD technique to the study of the initial reaction of Ni(Pt) on Si(100) isothermally. The concentration of Ni and Pt as a function of time in the low temperature range of less than 400 °C was evaluated. The XRD results show that the solid state reaction started with a outdiffusion of Ni from the Ni(Pt) alloy during the formation of Ni2Si prior to the formation of Ni(Pt)Si. This in situ technique is important for the characterization and the study of the nucleation and kinetics of the first phase formation of advanced alloy silicides. © 2003 Elsevier Ltd. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.ssc.2003.09.004
dc.sourceScopus
dc.subjectA. Semiconductor
dc.subjectA. Surfaces and interfaces
dc.subjectA. Thin films
dc.typeReview
dc.contributor.departmentMATERIALS SCIENCE
dc.description.doi10.1016/j.ssc.2003.09.004
dc.description.sourcetitleSolid State Communications
dc.description.volume128
dc.description.issue9-10
dc.description.page325-328
dc.description.codenSSCOA
dc.identifier.isiut000186266200001
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