Preparation and structure characterization of BiFeO3-SrBi2Nb2O9 thin films on silicon by sol-gel processing

Abstract

A new system 0.1BiFeO3-0.9SrBi2Nb2O9 thin films have been successfully prepared by an ethanolamine-modified sol-gel technique. The precursor solution was synthesized from compounds, Bi(NO3)3·5H2O, Sr(NO3)2, Fe(NO3)3·9H2O and Nb(OC2H5)5 in solution ethylene glycol monomethyl ether. The thin films were deposited on Si single crystal by spinning coating, and heat-treated at temperatures ranging from 400 °C to 700 °C. Crystallization of thin films occurred at about 550 ∼ 600 and the films exhibit a pure phase of layered perovskite ferroelectric structure. The grain of films is well distributed and the average grain size of the film is about 100nm.