Please use this identifier to cite or link to this item: https://doi.org/10.1016/S0254-0584(02)00029-9
Title: Dielectric relaxation in SrBi2(V0.1Nb0.9)2O9 layered perovskite ceramics
Authors: Ezhilvalavan, S. 
Xue, J.M. 
Wang, J. 
Keywords: Dielectric relaxation
Ferroelectrics
Layered perovskites
Sintering
Strontium bismuth niobate vanadate
Issue Date: 28-Apr-2002
Citation: Ezhilvalavan, S., Xue, J.M., Wang, J. (2002-04-28). Dielectric relaxation in SrBi2(V0.1Nb0.9)2O9 layered perovskite ceramics. Materials Chemistry and Physics 75 (1-3) : 50-55. ScholarBank@NUS Repository. https://doi.org/10.1016/S0254-0584(02)00029-9
Abstract: Strontium bismuth niobate vanadates SrBi2(V0.1Nb0.9)2O9 (SBVN) were prepared by solid state reaction sintering of high purity powder mixtures of constituent oxides. With the partial substitution of niobium by vanadium (10 at.%), the single phase layered perovskite structure was preserved and the sintering temperature of SBVN was significantly reduced. Dielectric properties of SBVN were investigated in a broad range of temperatures (400-1000 K) and frequencies (1Hz-10MHz). Strong relaxor-like dielectric relaxation at the ferroelectric transition temperature was observed. X-ray diffraction and scanning electron microscopy analysis were performed to envisage the influence of vanadium doping on the dielectric properties of SBN. The effect of post-sinter annealing on the frequency dispersion of SBVN and the possible mechanism for the observed dielectric relaxation are also presented. © 2002 Elsevier Science B.V. All rights reserved.
Source Title: Materials Chemistry and Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/107262
ISSN: 02540584
DOI: 10.1016/S0254-0584(02)00029-9
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