Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/107158
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dc.titleOscillatory optical second-harmonic generation from Si(001) surface during thin-film epitaxy
dc.contributor.authorTok, E.S.
dc.contributor.authorPrice, R.W.
dc.contributor.authorTaylor, A.G.
dc.contributor.authorZhang, J.
dc.date.accessioned2014-10-29T08:40:18Z
dc.date.available2014-10-29T08:40:18Z
dc.date.issued2000-02-14
dc.identifier.citationTok, E.S.,Price, R.W.,Taylor, A.G.,Zhang, J. (2000-02-14). Oscillatory optical second-harmonic generation from Si(001) surface during thin-film epitaxy. Applied Physics Letters 76 (7) : 933-935. ScholarBank@NUS Repository.
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/107158
dc.description.abstractPeriodic variation in optical second-harmonic generation during homoepitaxial growth of silicon on singular Si(001) surface is reported. The period of the oscillations corresponds to bilayer growth, and the oscillations are correlated with the mechanism associated with a two-dimensional layer-by-layer growth mode. This mechanism is tentatively attributed to periodic domain coverage variations analogous to the oscillatory response in linear optical technique of reflectance anisotropy. The current experiment, however, cannot distinguish this mechanism from another based on anisotropic second-harmonic generation response with respect to steps. © 2000 American Institute of Physics.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentMATERIALS SCIENCE
dc.description.sourcetitleApplied Physics Letters
dc.description.volume76
dc.description.issue7
dc.description.page933-935
dc.description.codenAPPLA
dc.identifier.isiutNOT_IN_WOS
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