Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/107073
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dc.titleIn situ transmission electron microscopy of AIN growth by nitridation of (0001) α-Al2O3
dc.contributor.authorYeadon, M.
dc.contributor.authorMarshall, M.T.
dc.contributor.authorHamdani, F.
dc.contributor.authorPekin, S.
dc.contributor.authorMorkoç, H.
dc.contributor.authorGibson, J.M.
dc.date.accessioned2014-10-29T08:39:04Z
dc.date.available2014-10-29T08:39:04Z
dc.date.issued1998
dc.identifier.citationYeadon, M.,Marshall, M.T.,Hamdani, F.,Pekin, S.,Morkoç, H.,Gibson, J.M. (1998). In situ transmission electron microscopy of AIN growth by nitridation of (0001) α-Al2O3. Journal of Applied Physics 83 (5) : 2847-2850. ScholarBank@NUS Repository.
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/107073
dc.description.abstractUsing a novel ultrahigh vacuum transmission electron microscope (TEM) with in situ reactive molecular beam epitaxy system, we report the successful synthesis of epitaxial A1N on the (0001) sapphire surface upon exposure to ammonia. The substrate, an electron transparent sapphire foil, was annealed in oxygen at high temperature to eliminate damage induced during preparation and to create large atomically flat regions. The sample was then held at 950 °C in flowing ammonia inside the microscope for 2 h during which periodic observations of microstructural development were made. We report direct observation of the formation of epitaxial AlN with the orientation relationship (0001)A1N//(0001)sub, [1010]A1N//[1120] sub and present both TEM and atomic force microscope images of the sample before and after nitridation. The results are consistent with a diffusion-limited reaction model involving transport of oxygen and nitrogen ions through the growing A1N epilayer between the free surface and the unreacted α-A12O3. © 1998 American Institute of Physics.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentMATERIALS SCIENCE
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume83
dc.description.issue5
dc.description.page2847-2850
dc.description.codenJAPIA
dc.identifier.isiutNOT_IN_WOS
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