Please use this identifier to cite or link to this item: https://doi.org/10.1080/10584580490459026
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dc.titleFerroelectric Bi4-xSmxTi3O12 thin films fabricated by pulsed laser deposition for Nv-RAM applications
dc.contributor.authorHu, X.B.
dc.contributor.authorGarg, A.
dc.contributor.authorWang, J.
dc.contributor.authorBarber, Z.H.
dc.date.accessioned2014-10-29T08:38:38Z
dc.date.available2014-10-29T08:38:38Z
dc.date.issued2004
dc.identifier.citationHu, X.B., Garg, A., Wang, J., Barber, Z.H. (2004). Ferroelectric Bi4-xSmxTi3O12 thin films fabricated by pulsed laser deposition for Nv-RAM applications. Integrated Ferroelectrics 61 : 123-127. ScholarBank@NUS Repository. https://doi.org/10.1080/10584580490459026
dc.identifier.issn10584587
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/107043
dc.description.abstractFerroelectric Bi4-xSmxTiO12 (BSmT) thin films have been fabricated on Pt/TiOx/SiO2/Si substrates by pulsed laser deposition (PLD) and their ferroelectric properties have been characterised. The remanent polarisation (2Pr) was 17.5 μC/cm 2, 41.8 μC/cm2, 9.3 μC/cm2, for x = 0.55, 0.70, and 1.00, respectively, at an applied maximum field of 450 kV/cm. The polarisation of the BSmT (x = 0.70) film decreased to 86% of the initial value after 5.0 × 108 switching cycles.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1080/10584580490459026
dc.sourceScopus
dc.subjectBi4Ti3O12
dc.subjectFerroelectric
dc.subjectPulsed laser deposition (PLD)
dc.subjectThin films
dc.typeArticle
dc.contributor.departmentMATERIALS SCIENCE
dc.description.doi10.1080/10584580490459026
dc.description.sourcetitleIntegrated Ferroelectrics
dc.description.volume61
dc.description.page123-127
dc.description.codenIFERE
dc.identifier.isiut000222470500018
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