Please use this identifier to cite or link to this item:
https://doi.org/10.1080/10584580490459026
DC Field | Value | |
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dc.title | Ferroelectric Bi4-xSmxTi3O12 thin films fabricated by pulsed laser deposition for Nv-RAM applications | |
dc.contributor.author | Hu, X.B. | |
dc.contributor.author | Garg, A. | |
dc.contributor.author | Wang, J. | |
dc.contributor.author | Barber, Z.H. | |
dc.date.accessioned | 2014-10-29T08:38:38Z | |
dc.date.available | 2014-10-29T08:38:38Z | |
dc.date.issued | 2004 | |
dc.identifier.citation | Hu, X.B., Garg, A., Wang, J., Barber, Z.H. (2004). Ferroelectric Bi4-xSmxTi3O12 thin films fabricated by pulsed laser deposition for Nv-RAM applications. Integrated Ferroelectrics 61 : 123-127. ScholarBank@NUS Repository. https://doi.org/10.1080/10584580490459026 | |
dc.identifier.issn | 10584587 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/107043 | |
dc.description.abstract | Ferroelectric Bi4-xSmxTiO12 (BSmT) thin films have been fabricated on Pt/TiOx/SiO2/Si substrates by pulsed laser deposition (PLD) and their ferroelectric properties have been characterised. The remanent polarisation (2Pr) was 17.5 μC/cm 2, 41.8 μC/cm2, 9.3 μC/cm2, for x = 0.55, 0.70, and 1.00, respectively, at an applied maximum field of 450 kV/cm. The polarisation of the BSmT (x = 0.70) film decreased to 86% of the initial value after 5.0 × 108 switching cycles. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1080/10584580490459026 | |
dc.source | Scopus | |
dc.subject | Bi4Ti3O12 | |
dc.subject | Ferroelectric | |
dc.subject | Pulsed laser deposition (PLD) | |
dc.subject | Thin films | |
dc.type | Article | |
dc.contributor.department | MATERIALS SCIENCE | |
dc.description.doi | 10.1080/10584580490459026 | |
dc.description.sourcetitle | Integrated Ferroelectrics | |
dc.description.volume | 61 | |
dc.description.page | 123-127 | |
dc.description.coden | IFERE | |
dc.identifier.isiut | 000222470500018 | |
Appears in Collections: | Staff Publications |
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