Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1834986
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dc.titleFerroelectric behaviors and charge carriers in Nd-doped Bi 4Ti 3O 12 thin films
dc.contributor.authorGao, X.S.
dc.contributor.authorXue, J.M.
dc.contributor.authorWang, J.
dc.date.accessioned2014-10-29T08:38:37Z
dc.date.available2014-10-29T08:38:37Z
dc.date.issued2005-02-01
dc.identifier.citationGao, X.S., Xue, J.M., Wang, J. (2005-02-01). Ferroelectric behaviors and charge carriers in Nd-doped Bi 4Ti 3O 12 thin films. Journal of Applied Physics 97 (3) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1834986
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/107041
dc.description.abstractNd-doped Bi 4Ti 3O 12 thin films, (Bi 3.25Nd 0.85) 4Ti 3O 12, of layered perovskite structure were synthesized by if sputtering, followed by postannealing at 600-700°C. They show enhanced ferroelectricity with rising postannealing temperature in the range of 650-750°C. When annealed at 700°C, a remanent polarization 2P r of 25.2 μC/cm 2 and a coercive field E C of 87.2 kV/cm were measured at 9 V, together with an almost fatigue-free behavior up to 1.4 × 10 10 switching cycles. Their ferroelectric, dielectric, and ac conductivity properties over the temperature range from 25 to 300°C were studied over the frequency range of 0.1-1 MHz. Space-charge relaxation by oxygen vacancies was shown to play an important role in determining the dielectric and conductivity behaviors of Nd-doped Bi 4Ti 3O 12 thin films. © 2005 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1834986
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentMATERIALS SCIENCE
dc.description.doi10.1063/1.1834986
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume97
dc.description.issue3
dc.description.page-
dc.description.codenJAPIA
dc.identifier.isiut000226778300055
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