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Please use this identifier to cite or link to this item: https://doi.org/10.1088/0022-3727/35/18/304
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dc.titleEvidence of lower valence state of vanadium on the dielectric relaxation of ferroelectric SrBi2 (V0.1Nb0.9)2O9
dc.contributor.authorEzhilvalavan, S.
dc.contributor.authorXue, J.M.
dc.contributor.authorWang, J.
dc.date.accessioned2014-10-29T08:38:31Z
dc.date.available2014-10-29T08:38:31Z
dc.date.issued2002-09-21
dc.identifier.citationEzhilvalavan, S., Xue, J.M., Wang, J. (2002-09-21). Evidence of lower valence state of vanadium on the dielectric relaxation of ferroelectric SrBi2 (V0.1Nb0.9)2O9. Journal of Physics D: Applied Physics 35 (18) : 2254-2259. ScholarBank@NUS Repository. https://doi.org/10.1088/0022-3727/35/18/304
dc.identifier.issn00223727
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/107032
dc.description.abstractDielectric properties of SrBi2(V0.1Nb0.9)2O9 (SBVN) were investigated in a broad range of temperatures (400-1000 K) and frequencies (1 Hz to 10 MHz). Strong dielectric relaxation at the ferroelectric transition temperature was observed. The effect of post-sinter annealing on the frequency dispersion of SBVN and the possible mechanisms for the observed dielectric relaxation are presented. Electron paramagnetic resonance and x-ray photoelectron spectroscopy investigations provide direct evidence for the existence of lower valence state of vanadium (V4+) in SBVN ceramics.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentMATERIALS SCIENCE
dc.description.doi10.1088/0022-3727/35/18/304
dc.description.sourcetitleJournal of Physics D: Applied Physics
dc.description.volume35
dc.description.issue18
dc.description.page2254-2259
dc.description.codenJPAPB
dc.identifier.isiut000178621000006
Appears in Collections:Staff Publications

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