Please use this identifier to cite or link to this item:
|Title:||Effects of excess Bi2O3 on the ferroelectric behavior of Nd-doped Bi4Ti3O12 thin films||Authors:||Gao, X.
|Issue Date:||Apr-2005||Citation:||Gao, X., Zhou, Z., Xue, J., Wang, J. (2005-04). Effects of excess Bi2O3 on the ferroelectric behavior of Nd-doped Bi4Ti3O12 thin films. Journal of the American Ceramic Society 88 (4) : 1037-1040. ScholarBank@NUS Repository. https://doi.org/10.1111/j.1551-2916.2005.00201.x||Abstract:||Effects of excess Bi2O3 content on formation of (Bi3.15Nd0.85)-Ti3O12 (BNT) films deposited by RF sputtering were investigated. The microstructures and electrical properties of BNT thin films are strongly dependent on the excess Bi 2O3 content and post-sputtering annealing temperature, as examined by XRD, SEM, and P-E hysteresis loops. A small amount of excess bismuth improves the crystallinity and therefore polarization of BNT films, while too much excess bismuth leads to a reduction in polarization and an increase in coercive field. P-E loops of well-established squareness were observed for the BNT films derived from a moderate amount of Bi2O3 excess (5 mol%), where a remanent polarization 2Pr of 25.2 μC/cm 2 and 2Ec of 161.5 kV/cm were shown. A similar change in dielectric constant with increasing excess Bi2O3 content was also observed, with the highest dielectric constant of 304.1 being measured for the BNT film derived from 5 mol% excess Bi2O3.||Source Title:||Journal of the American Ceramic Society||URI:||http://scholarbank.nus.edu.sg/handle/10635/107018||ISSN:||00027820||DOI:||10.1111/j.1551-2916.2005.00201.x|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Aug 7, 2020
WEB OF SCIENCETM
checked on Jul 31, 2020
checked on Aug 1, 2020
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.