1. ScholarBank@NUS

Han Yang,Saxena

rp06867

Collaboration Map View Statistics Email Alert RSS Feed

Profile

Full Name
Han Yang,Saxena
Variants
Srinivasan Madapusi P.
Madapusi, S.
Srinivasan Malapusi P.
Srinivasan Madapusi
Srinivasan, M.P
Srinivasan, P.
Srinivasan, Madapusi P.
Srinivasan M.P.
Srinivasan, M.P.
Srinivasan, M.
 
Main Affiliation
 
Faculty
 

Publications

Refined By:
Date Issued:  [2000 TO 2023]
Author:  Benistant, F.
Author:  Chan, L.

Results 1-16 of 16 (Search time: 0.004 seconds).

Issue DateTitleAuthor(s)
1Jan-2006Application of molecular dynamics for low-energy ion implantation in crystalline siliconChan, H.Y.; Srinivasan, M.P. ; Montgomery, N.J.; Mulcahy, C.P.A.; Biswas, S.; Gossmann, H.-J.L.; Harris, M.; Nordlund, K.; Benistant, F.; Ng, C.M.; Gui, D.; Chan, L.
210-May-2006Continuum modeling of post-implantation damage and the effective plus factor in crystalline silicon at room temperatureChan, H.Y.; Srinivasan, M.P. ; Benistant, F.; Mok, K.R.; Chan, L.; Jin, H.M.
35-Dec-2008Experimental and simulation study of the flash lamp annealing for boron ultra-shallow junction formation and its stabilityMok, K.R.C.; Yeong, S.H.; Colombeau, B.; Benistant, F.; Poon, C.H.; Chan, L.; Srinivasan, M.P. 
410-May-2006Molecular dynamics with phase-shift-based electronic stopping for calibration of ion implantation profiles in crystalline siliconChan, H.Y.; Nordlund, K.; Gossmann, H.-J.L.; Harris, M.; Montgomery, N.J.; Mulcahy, C.P.A.; Biswas, S.; Srinivasan, M.P. ; Benistant, F.; Ng, C.M.; Chan, L.
52006Phosphorus implant for S/D extension formation: Diffusion and activation study after spacer and spike annealYeong, S.H.; Colombeau, B.; Benistant, F.; Srinivasan, M.P. ; Mulcahy, C.P.A.; Lee, P.S.; Chan, L.
62006Phosphorus implant for S/D extension formation: Diffusion and activation study after spacer and spike annealYeong, S.H.; Colombeau, B.; Benistant, F.; Srinivasan, M.P. ; Mulcahy, C.P.A.; Lee, P.S.; Chan, L.
7Jul-2005Sampling calibration of ion implantation profiles in crystalline silicon from 0.1 to 300 keV using Monte Carlo simulationsChan, H.Y.; Srinivasan, M.P. ; Benistant, F.; Jin, H.M.; Chan, L.
8Jul-2005Sampling calibration of ion implantation profiles in crystalline silicon from 0.1 to 300 keV using Monte Carlo simulationsChan, H.Y.; Srinivasan, M.P. ; Benistant, F.; Jin, H.M.; Chan, L.
9Jan-2005The effect of interatomic potential in molecular dynamics simulation of low energy ion implantationChan, H.Y.; Nordlund, K.; Peltola, J.; Gossmann, H.-J.L.; Ma, N.L.; Srinivasan, M.P. ; Benistant, F.; Chan, L.
10Jan-2005The effect of interatomic potential in molecular dynamics simulation of low energy ion implantationChan, H.Y.; Nordlund, K.; Peltola, J.; Gossmann, H.-J.L.; Ma, N.L.; Srinivasan, M.P. ; Benistant, F.; Chan, L.
112008The impact of boron halo on phosphorus junction formation and stabilityYeong, S.H.; Colombeau, B.; Mok, K.R.C.; Benistant, F.; Chan, L.; Srinivasan, M.P. 
122008The impact of boron halo on phosphorus junction formation and stabilityYeong, S.H.; Colombeau, B.; Mok, K.R.C.; Benistant, F.; Chan, L.; Srinivasan, M.P. 
135-Dec-2008The impact of nitrogen co-implantation on boron ultra-shallow junction formation and underlying physical understandingYeong, S.H.; Colombeau, B.; Mok, K.R.C.; Benistant, F.; Liu, C.J. ; Wee, A.T.S. ; Dong, G.; Chan, L.; Srinivasan, M.P. 
142008Understanding of boron junction stability in preamorphized silicon after optimized flash annealingYeong, S.H.; Colombeau, B.; Poon, C.H.; Mok, K.R.C.; See, A.; Benistant, F.; Tan, D.X.M.; Pey, K.L.; Ng, C.M.; Chan, L.; Srinivasan, M.P. 
152008Understanding of boron junction stability in preamorphized silicon after optimized flash annealingYeong, S.H.; Colombeau, B.; Poon, C.H.; Mok, K.R.C.; See, A.; Benistant, F.; Tan, D.X.M.; Pey, K.L.; Ng, C.M.; Chan, L.; Srinivasan, M.P. 
162008Understanding of carbon/fluorine Co-implant effect on boron-doped junction formed during soak annealingYeong, S.H.; Colombeau, B.; Mok, K.R.C.; Benistant, F.; Liu, C.J. ; Wee, A.T.S. ; Chan, L.; Ramam, A.; Srinivasan, M.P.