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Han Yang,Saxena

rp06867

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Full Name
Han Yang,Saxena
Variants
Srinivasan Madapusi P.
Madapusi, S.
Srinivasan Malapusi P.
Srinivasan Madapusi
Srinivasan, M.P
Srinivasan, P.
Srinivasan, Madapusi P.
Srinivasan M.P.
Srinivasan, M.P.
Srinivasan, M.
 
Main Affiliation
 
Faculty
 

Publications

Refined By:
Date Issued:  [2000 TO 2023]
Author:  Colombeau, B.

Results 1-13 of 13 (Search time: 0.004 seconds).

Issue DateTitleAuthor(s)
12007Defect engineering by surface chemical state in boron-doped preamorphized siliconYeong, S.H.; Srinivasan, M.P. ; Colombeau, B.; Chan, L.; Akkipeddi, R.; Kwok, C.T.M.; Vaidyanathan, R.; Seebauer, E.G.
22008Defect engineering for ultrashallow junctions using surfacesSeebauer, E.G.; Kwok, C.T.M.; Vaidyanathan, R.; Kondratenko, Y.V.; Yeong, S.H.; Srinivasan, M.P. ; Colombeau, B.; Chan, L.
32007Defect engineering for ultrashallow junctions using surfacesSeebauer, E.G.; Yeong, S.H.; Srinivasan, M.P. ; Kwok, C.T.M.; Vaidyanathan, R.; Colombeau, B.; Chan, L.
45-Dec-2008Experimental and simulation study of the flash lamp annealing for boron ultra-shallow junction formation and its stabilityMok, K.R.C.; Yeong, S.H.; Colombeau, B.; Benistant, F.; Poon, C.H.; Chan, L.; Srinivasan, M.P. 
52006Modeling and simulation of the influence of SOI structure on damage evolution and ultra-shallow junction formed by Ge preamorphization implants and solid phase epitaxial regrowthMok, K.R.C.; Colombeau, B.; Jaraiz, M.; Castrillo, P.; Rubio, J.E.; Pinacho, R.; Srinivasan, M.P. ; Benistant, F.; Martin-Bragado, I.; Hamilton, J.J.
62006Phosphorus implant for S/D extension formation: Diffusion and activation study after spacer and spike annealYeong, S.H.; Colombeau, B.; Benistant, F.; Srinivasan, M.P. ; Mulcahy, C.P.A.; Lee, P.S.; Chan, L.
72006Phosphorus implant for S/D extension formation: Diffusion and activation study after spacer and spike annealYeong, S.H.; Colombeau, B.; Benistant, F.; Srinivasan, M.P. ; Mulcahy, C.P.A.; Lee, P.S.; Chan, L.
82008The impact of boron halo on phosphorus junction formation and stabilityYeong, S.H.; Colombeau, B.; Mok, K.R.C.; Benistant, F.; Chan, L.; Srinivasan, M.P. 
92008The impact of boron halo on phosphorus junction formation and stabilityYeong, S.H.; Colombeau, B.; Mok, K.R.C.; Benistant, F.; Chan, L.; Srinivasan, M.P. 
105-Dec-2008The impact of nitrogen co-implantation on boron ultra-shallow junction formation and underlying physical understandingYeong, S.H.; Colombeau, B.; Mok, K.R.C.; Benistant, F.; Liu, C.J. ; Wee, A.T.S. ; Dong, G.; Chan, L.; Srinivasan, M.P. 
112008Understanding of boron junction stability in preamorphized silicon after optimized flash annealingYeong, S.H.; Colombeau, B.; Poon, C.H.; Mok, K.R.C.; See, A.; Benistant, F.; Tan, D.X.M.; Pey, K.L.; Ng, C.M.; Chan, L.; Srinivasan, M.P. 
122008Understanding of boron junction stability in preamorphized silicon after optimized flash annealingYeong, S.H.; Colombeau, B.; Poon, C.H.; Mok, K.R.C.; See, A.; Benistant, F.; Tan, D.X.M.; Pey, K.L.; Ng, C.M.; Chan, L.; Srinivasan, M.P. 
132008Understanding of carbon/fluorine Co-implant effect on boron-doped junction formed during soak annealingYeong, S.H.; Colombeau, B.; Mok, K.R.C.; Benistant, F.; Liu, C.J. ; Wee, A.T.S. ; Chan, L.; Ramam, A.; Srinivasan, M.P.