Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/98970
Title: Detection of oxidation stacking faults in silicon wafers by a multipass Fabry-Perot Rayleigh-Brillouin scattering spectrometer
Authors: Ng, S.C. 
Taijing, L. 
Issue Date: Jul-1993
Source: Ng, S.C.,Taijing, L. (1993-07). Detection of oxidation stacking faults in silicon wafers by a multipass Fabry-Perot Rayleigh-Brillouin scattering spectrometer. Journal of Crystal Growth 131 (1-2) : 265-267. ScholarBank@NUS Repository.
Abstract: The ring-bands of oxidation stacking faults (OSFs) in silicon wafers were detected nondestructively using a multipass Fabry-Perot Rayleigh-Brillouin scattering spectrometer. © 1993.
Source Title: Journal of Crystal Growth
URI: http://scholarbank.nus.edu.sg/handle/10635/98970
ISSN: 00220248
Appears in Collections:Staff Publications

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