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|Title:||Detection of oxidation stacking faults in silicon wafers by a multipass Fabry-Perot Rayleigh-Brillouin scattering spectrometer|
|Authors:||Ng, S.C. |
|Source:||Ng, S.C.,Taijing, L. (1993-07). Detection of oxidation stacking faults in silicon wafers by a multipass Fabry-Perot Rayleigh-Brillouin scattering spectrometer. Journal of Crystal Growth 131 (1-2) : 265-267. ScholarBank@NUS Repository.|
|Abstract:||The ring-bands of oxidation stacking faults (OSFs) in silicon wafers were detected nondestructively using a multipass Fabry-Perot Rayleigh-Brillouin scattering spectrometer. © 1993.|
|Source Title:||Journal of Crystal Growth|
|Appears in Collections:||Staff Publications|
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