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https://scholarbank.nus.edu.sg/handle/10635/98954
| Title: | XPS and SIMS studies of CVD-grown cubic SiC films on Si(100) | Authors: | Wee, A.T.S. Feng, Z.C. Hng, H.H. Tan, K.L. Tin, C.C. Hu, R. Coston, R. |
Issue Date: | 1994 | Citation: | Wee, A.T.S.,Feng, Z.C.,Hng, H.H.,Tan, K.L.,Tin, C.C.,Hu, R.,Coston, R. (1994). XPS and SIMS studies of CVD-grown cubic SiC films on Si(100). Materials Research Society Symposium - Proceedings 339 : 411-416. ScholarBank@NUS Repository. | Abstract: | A series of CVD-grown 3C-SiC/Si(100) films of different growth times, and hence film thicknesses, are studied by X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). XPS showed that the surfaces of the samples consist of Si oxides (SiO2 and SiOx where x < 2) and unreacted CH. Unreacted elemental Si is also present and its amount decreases with increasing growth time. This surface overlayer is further investigated by changing the photoelectron take-off angle and from chemical etching studies. Compositional variations of the SiC films are also studied using SIMS. | Source Title: | Materials Research Society Symposium - Proceedings | URI: | http://scholarbank.nus.edu.sg/handle/10635/98954 | ISSN: | 02729172 |
| Appears in Collections: | Staff Publications |
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