Please use this identifier to cite or link to this item: https://doi.org/10.1117/12.323752
Title: Raman and photoluminescence investigation of ZnxCd1-xSe thin film under high pressure
Authors: Li, W.S. 
Shen, Z.X. 
Shen, D.Z.
Fan, X.W.
Keywords: High pressure
Photoluminescence
Raman
Issue Date: 1998
Citation: Li, W.S., Shen, Z.X., Shen, D.Z., Fan, X.W. (1998). Raman and photoluminescence investigation of ZnxCd1-xSe thin film under high pressure. Proceedings of SPIE - The International Society for Optical Engineering 3424 : 126-130. ScholarBank@NUS Repository. https://doi.org/10.1117/12.323752
Abstract: Micro-Raman and photoluminescence (PL) studies of ZnxCd1-xSe (x=0.68) thin film have been carried out under high pressure at room temperature. In the PL spectra, the PL energy gap shift exhibits sublinearity with pressure and a least-square fitting to the experimental data gives a pressure coefficients of α=0.082 eV/GPa and β=-0.0052 eV/GPa2. The second-order pressure coefficient β of the energy gap obtained experimentally is anomalously large and its origin was explained by alloy potential fluctuation with increasing pressure. In the Raman spectra, the first-order pressure coefficient was also calculated by least-square fit. The low energy tail of the longitudinal-optical (LO) phonon was found to develop with pressure for the first time, and the line shape change with pressure is interpreted in terms of a "spatial correlation" (SC) model.
Source Title: Proceedings of SPIE - The International Society for Optical Engineering
URI: http://scholarbank.nus.edu.sg/handle/10635/98863
ISSN: 0277786X
DOI: 10.1117/12.323752
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