Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/98681
Title: Effect of ITO carrier concentration on the performance of organic light-emitting diodes
Authors: Zhu, F.
Zhang, K.
Huan, C.H.A. 
Wee, A.T.S. 
Guenther, E.
Jin, C.S.
Issue Date: 2000
Source: Zhu, F.,Zhang, K.,Huan, C.H.A.,Wee, A.T.S.,Guenther, E.,Jin, C.S. (2000). Effect of ITO carrier concentration on the performance of organic light-emitting diodes. Materials Research Society Symposium - Proceedings 598 : BB11.11.1-BB11.11.11. ScholarBank@NUS Repository.
Abstract: The indium tin oxide (ITO) anodes for organic light emitting diode (OLED) were made from an oxidized target with In2O3 and SnO2 in a weight proportion of 9:1 using the RF magnetron sputtering method. The comparable ITO anodes with different carrier concentrations were prepared by varying the hydrogen partial pressure during film deposition. The current-luminance-voltage characteristics of the devices indicated that a high carrier concentration in ITO plays a role in improving OLED performance. A maximum efficiency of 3.8 cd/A was achieved when an ITO anode with a higher carrier concentration of 9×1020 cm-3 was used in a fluorene based OLED. This efficiency is about 1.5 times higher than that of an identical device made with an ITO anode having a lower carrier concentration of 5×1020 cm-3. The increase in electroluminescent efficiency reflects an enhanced hole-injection in the device. We consider that enhanced hole injection is due to the reduced band bending in ITO when it has a high carrier concentration.
Source Title: Materials Research Society Symposium - Proceedings
URI: http://scholarbank.nus.edu.sg/handle/10635/98681
ISSN: 02729172
Appears in Collections:Staff Publications

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