Please use this identifier to cite or link to this item:
|Title:||Two-dimensional electron or hole gas at ZnO/6H-SiC interface|
|Authors:||Lu, Y.H. |
|Citation:||Lu, Y.H., Xu, B., Wu, R.Q., Feng, Y.P. (2010). Two-dimensional electron or hole gas at ZnO/6H-SiC interface. Applied Physics Letters 96 (19) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3425667|
|Abstract:||Electronic structures of ZnO(0001)/6H-SiC(0001) interfaces are investigated using first-principles method. Two-dimensional charge carriers are found at the interfaces. Depending on the interface structure, the type of charge carriers can be n -type if oxygen terminated ZnO(0001) is grown on SiC and p -type when the interface is formed with Zn-terminated ZnO and C-terminated SiC. The interface formed with Zn-terminated ZnO and Si-terminated SiC is found to be half-metallic. Intrinsic charge carriers at the interface of the two wide gap semiconductors could be useful for future oxide-based electronics and spintronics. © 2010 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Sep 19, 2018
WEB OF SCIENCETM
checked on Sep 3, 2018
checked on Sep 14, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.