Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3425667
Title: Two-dimensional electron or hole gas at ZnO/6H-SiC interface
Authors: Lu, Y.H. 
Xu, B. 
Wu, R.Q. 
Feng, Y.P. 
Issue Date: 2010
Source: Lu, Y.H., Xu, B., Wu, R.Q., Feng, Y.P. (2010). Two-dimensional electron or hole gas at ZnO/6H-SiC interface. Applied Physics Letters 96 (19) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3425667
Abstract: Electronic structures of ZnO(0001)/6H-SiC(0001) interfaces are investigated using first-principles method. Two-dimensional charge carriers are found at the interfaces. Depending on the interface structure, the type of charge carriers can be n -type if oxygen terminated ZnO(0001) is grown on SiC and p -type when the interface is formed with Zn-terminated ZnO and C-terminated SiC. The interface formed with Zn-terminated ZnO and Si-terminated SiC is found to be half-metallic. Intrinsic charge carriers at the interface of the two wide gap semiconductors could be useful for future oxide-based electronics and spintronics. © 2010 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/98475
ISSN: 00036951
DOI: 10.1063/1.3425667
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