Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1719267
Title: Time-resolved reflectance studies of silicon during laser thermal processing of amorphous silicon gates on ultrathin gate oxides
Authors: Chong, Y.F.
Gossmann, H.-J.L.
Thompson, M.O.
Yang, S.
Pey, K.L.
Wee, A.T.S. 
Issue Date: 1-Jun-2004
Citation: Chong, Y.F., Gossmann, H.-J.L., Thompson, M.O., Yang, S., Pey, K.L., Wee, A.T.S. (2004-06-01). Time-resolved reflectance studies of silicon during laser thermal processing of amorphous silicon gates on ultrathin gate oxides. Journal of Applied Physics 95 (11 I) : 6048-6053. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1719267
Abstract: The melt characteristics of silicon during laser thermal processing (LTP) of amorphous silicon gates on ultrathin gate oxides were investigated. To reduce the gate depletion effect in advanced semiconductor devices, LTP was used. In situ time-resolved reflectance (TRR) measurements and ex situ secondary ion mass spectrometry were used to study the influence of implantation-induced damage and chemical inhomogeneities on the melt behavior of ion-implanted a-Si. The results from TRR measurements show the presence of a buried melt for a-Si implanted with B +.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/98413
ISSN: 00218979
DOI: 10.1063/1.1719267
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