Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.susc.2004.09.004
Title: Thickness dependent valence fluctuation of CeN film
Authors: Xiao, W. 
Guo, Q.
Wang, E.G.
Keywords: Auger electron spectroscopy
Cerium
Nitrides
X-ray photoelectron spectroscopy
Issue Date: 20-Nov-2004
Source: Xiao, W., Guo, Q., Wang, E.G. (2004-11-20). Thickness dependent valence fluctuation of CeN film. Surface Science 572 (2-3) : 296-300. ScholarBank@NUS Repository. https://doi.org/10.1016/j.susc.2004.09.004
Abstract: CeN films with different thickness are synthesized on a Re(0001) substrate and studied by X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy. A thickness dependent valence fluctuation is observed by XPS. Valence fluctuation only occurs with film thickness larger than a critical value of about 15nm. This interesting phenomenon is mainly attributed to the stress in CeN films due to the large lattice mismatch between the CeN film and the substrate, and a possible composition deviation at the interface. © 2004 Elsevier B.V. All rights reserved.
Source Title: Surface Science
URI: http://scholarbank.nus.edu.sg/handle/10635/98391
ISSN: 00396028
DOI: 10.1016/j.susc.2004.09.004
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